AP13P15GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP13P15GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO251

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AP13P15GJ-HF datasheet

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 ap13p15gj-hf.pdf pdf_icon

AP13P15GJ-HF

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application

 6.1. Size:62K  ape
 ap13p15gs p-hf.pdf pdf_icon

AP13P15GJ-HF

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design

 6.2. Size:72K  ape
 ap13p15gp ap13p15gs.pdf pdf_icon

AP13P15GJ-HF

AP13P15GS/P Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D

 9.1. Size:1589K  cn apm
 ap13p06d.pdf pdf_icon

AP13P15GJ-HF

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

MOSTRAR MÁS

Otros transistores... AP1332GEU-HF, AP1332GEV-HF, AP1333GU, AP1334GEU-HF, AP13N50I-HF, AP13N50R-HF, AP13N50W, AP13P15GH-HF, IRF630, AP13P15GP-HF, AP13P15GS-HF, AP1430GEU6-HF, AP14S50S-HF, AP15N03GH-HF, AP15N03GJ-HF, AP15P10GH-HF, AP15P10GJ-HF