AP13P15GJ-HF PDF and Equivalents Search

 

AP13P15GJ-HF Specs and Replacement


   Type Designator: AP13P15GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO251
 

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AP13P15GJ-HF datasheet

 ..1. Size:100K  ape
ap13p15gj-hf.pdf pdf_icon

AP13P15GJ-HF

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application... See More ⇒

 6.1. Size:62K  ape
ap13p15gs p-hf.pdf pdf_icon

AP13P15GJ-HF

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design... See More ⇒

 6.2. Size:72K  ape
ap13p15gp ap13p15gs.pdf pdf_icon

AP13P15GJ-HF

AP13P15GS/P Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D... See More ⇒

 9.1. Size:1589K  cn apm
ap13p06d.pdf pdf_icon

AP13P15GJ-HF

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R ... See More ⇒

Detailed specifications: AP1332GEU-HF , AP1332GEV-HF , AP1333GU , AP1334GEU-HF , AP13N50I-HF , AP13N50R-HF , AP13N50W , AP13P15GH-HF , IRF630 , AP13P15GP-HF , AP13P15GS-HF , AP1430GEU6-HF , AP14S50S-HF , AP15N03GH-HF , AP15N03GJ-HF , AP15P10GH-HF , AP15P10GJ-HF .

Keywords - AP13P15GJ-HF MOSFET specs

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