AP15P10GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15P10GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO251

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AP15P10GJ-HF datasheet

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AP15P10GJ-HF

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount app

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AP15P10GJ-HF

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology

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AP15P10GJ-HF

AP15P10GJ www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11 0.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Conv

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ap15p10gh.pdf pdf_icon

AP15P10GJ-HF

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15A G RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology

Otros transistores... AP13P15GJ-HF, AP13P15GP-HF, AP13P15GS-HF, AP1430GEU6-HF, AP14S50S-HF, AP15N03GH-HF, AP15N03GJ-HF, AP15P10GH-HF, IRLB4132, AP15P10GP, AP15P10GS, AP15P15GH-HF, AP15P15GI, AP15P15GM-HF, AP15P15GP-HF, AP15T15GH-HF, AP15T15GI-HF