AP15P10GJ-HF MOSFET. Datasheet pdf. Equivalent

Type Designator: AP15P10GJ-HF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 96 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 37 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: TO251

AP15P10GJ-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP15P10GJ-HF Datasheet (PDF)

1.1. ap15p10gj.pdf Size:205K _a-power

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 230mΩ ▼ Fast Switching Characteristic ID -15A G ▼ RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology

1.2. ap15p10gj-hf.pdf Size:100K _a-power

AP15P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS -100V Ў Simple Drive Requirement RDS(ON) 230m? Ў Fast Switching Characteristic ID -15A G Ў RoHS Compliant & Halogen-Free S Description G D The TO-252 package is widely preferred for all commercial-industrial S TO-252(H) surface mount application

2.1. ap15p10gs.pdf Size:99K _a-power

AP15P10GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low Gate Charge BVDSS -100V Ў Simple Drive Requirement RDS(ON) 230m? Ў Fast Switching Characteristic ID -15A G Ў RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedize

2.2. ap15p10gi.pdf Size:218K _a-power

AP15P10GI Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 230mΩ ▼ Fast Switching Characteristic ID3 -8.3A G ▼ RoHS Compliant & Halogen-Free S Description AP15P10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

2.3. ap15p10gp-hf ap15p10gs-hf.pdf Size:98K _a-power

AP15P10GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Low Gate Charge BVDSS -100V ▼ Simple Drive Requirement RDS(ON) 230mΩ ▼ Fast Switching Characteristic ID -15A G ▼ RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D

2.4. ap15p10gp.pdf Size:99K _a-power