AP15P10GJ-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP15P10GJ-HF
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 96 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 250 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
Тип корпуса: TO251
Аналог (замена) для AP15P10GJ-HF
AP15P10GJ-HF Datasheet (PDF)
ap15p10gh-hf ap15p10gj-hf.pdf

AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount app
ap15p10gj.pdf

AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
ap15p10gj.pdf

AP15P10GJwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Conv
ap15p10gh.pdf

AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
Другие MOSFET... AP13P15GJ-HF , AP13P15GP-HF , AP13P15GS-HF , AP1430GEU6-HF , AP14S50S-HF , AP15N03GH-HF , AP15N03GJ-HF , AP15P10GH-HF , 5N60 , AP15P10GP , AP15P10GS , AP15P15GH-HF , AP15P15GI , AP15P15GM-HF , AP15P15GP-HF , AP15T15GH-HF , AP15T15GI-HF .
History: FQT7N10LTF | AP9479GM-HF
History: FQT7N10LTF | AP9479GM-HF



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