AP18P10GJ Todos los transistores

 

AP18P10GJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18P10GJ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO251

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AP18P10GJ Datasheet (PDF)

 ..1. Size:170K  ape
ap18p10gj.pdf

AP18P10GJ
AP18P10GJ

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

 0.1. Size:102K  ape
ap18p10gh-hf ap18p10gj-hf.pdf

AP18P10GJ
AP18P10GJ

AP18P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 6.1. Size:174K  ape
ap18p10gh.pdf

AP18P10GJ
AP18P10GJ

AP18P10GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-r

 6.2. Size:169K  ape
ap18p10gm.pdf

AP18P10GJ
AP18P10GJ

AP18P10GM-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP18P10 series are

 6.3. Size:172K  ape
ap18p10gk.pdf

AP18P10GJ
AP18P10GJ

AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design andsilicon process technology to

 6.4. Size:135K  ape
ap18p10gs.pdf

AP18P10GJ
AP18P10GJ

AP18P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GDre

 6.5. Size:153K  ape
ap18p10gi.pdf

AP18P10GJ
AP18P10GJ

AP18P10GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12AGDTO-220CFM(I)SDescriptionDAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized devicedesi

 6.6. Size:91K  ape
ap18p10gk-hf.pdf

AP18P10GJ
AP18P10GJ

AP18P10GK-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VD Simple Drive Requirement RDS(ON) 160mS Fast Switching Characteristic ID -3.1AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP18P10 series are from Advanced Power innovated design and siliconprocess technology to

 6.7. Size:94K  ape
ap18p10gm-hf.pdf

AP18P10GJ
AP18P10GJ

AP18P10GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination

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