AP18P10GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP18P10GJ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO251

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AP18P10GJ datasheet

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 ap18p10gj.pdf pdf_icon

AP18P10GJ

AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 0.1. Size:102K  ape
 ap18p10gh-hf ap18p10gj-hf.pdf pdf_icon

AP18P10GJ

AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 6.1. Size:174K  ape
 ap18p10gh.pdf pdf_icon

AP18P10GJ

AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r

 6.2. Size:169K  ape
 ap18p10gm.pdf pdf_icon

AP18P10GJ

AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP18P10 series are

MOSTRAR MÁS

Otros transistores... AP18N20GI, AP18N20GJ-HF, AP18N20GP-HF, AP18N20GS-HF, AP18N50W, AP18P10AGH-HF, AP18P10AGJ-HF, AP18P10GH, AON7403, AP18P10GI, AP18P10GK-HF, AP18P10GM-HF, AP18P10GS, AP18T10AGH-HF, AP18T10AGJ-HF, AP18T10AGK-HF, AP18T10GH-HF