AP18P10GJ Specs and Replacement

Type Designator: AP18P10GJ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO251

AP18P10GJ substitution

- MOSFET ⓘ Cross-Reference Search

 

AP18P10GJ datasheet

 ..1. Size:170K  ape
 ap18p10gj.pdf pdf_icon

AP18P10GJ

AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

 0.1. Size:102K  ape
 ap18p10gh-hf ap18p10gj-hf.pdf pdf_icon

AP18P10GJ

AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ... See More ⇒

 6.1. Size:174K  ape
 ap18p10gh.pdf pdf_icon

AP18P10GJ

AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r... See More ⇒

 6.2. Size:169K  ape
 ap18p10gm.pdf pdf_icon

AP18P10GJ

AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP18P10 series are ... See More ⇒

SHOW MORE

Detailed specifications: AP18N20GI, AP18N20GJ-HF, AP18N20GP-HF, AP18N20GS-HF, AP18N50W, AP18P10AGH-HF, AP18P10AGJ-HF, AP18P10GH, AON7403, AP18P10GI, AP18P10GK-HF, AP18P10GM-HF, AP18P10GS, AP18T10AGH-HF, AP18T10AGJ-HF, AP18T10AGK-HF, AP18T10GH-HF

Keywords - AP18P10GJ MOSFET specs

 AP18P10GJ cross reference

 AP18P10GJ equivalent finder

 AP18P10GJ pdf lookup

 AP18P10GJ substitution

 AP18P10GJ replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs