AP2302AGN-HF Todos los transistores

 

AP2302AGN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2302AGN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: SOT23
 

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AP2302AGN-HF Datasheet (PDF)

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 ap2302agn-hf.pdf pdf_icon

AP2302AGN-HF

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

 5.1. Size:176K  ape
 ap2302agn.pdf pdf_icon

AP2302AGN-HF

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2302A series are from Advanced Power innovated design andsilicon process technology to achieve the l

 7.1. Size:2068K  cn apm
 ap2302ai.pdf pdf_icon

AP2302AGN-HF

AP2302AI 20V N-Channel Enhancement Mode MOSFET Description The AP2302AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS DR

 8.1. Size:96K  ape
 ap2302gn-hf.pdf pdf_icon

AP2302AGN-HF

AP2302GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS CompliantSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistanc

MOSTRAR MÁS

Otros transistores... AP20T15GI-HF , AP20T15GP-HF , AP22N13GH-HF , AP22T03GH-HF , AP2301AGN-HF , AP2301BGN-HF , AP2301GN-HF , AP2301N-HF , IRF1407 , AP2302GN-HF , AP2303GN-HF , AP2304AGN-HF , AP2304GN-HF , AP2305AGN-HF , AP2305BGN-HF , AP2305CGN-HF , AP2305GN-HF .

History: SVD1055SA | 2N3971 | SRT15N050HS2

 

 
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