All MOSFET. AP2302AGN-HF Datasheet

 

AP2302AGN-HF Datasheet and Replacement


   Type Designator: AP2302AGN-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.5 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT23
 

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AP2302AGN-HF Datasheet (PDF)

 ..1. Size:94K  ape
ap2302agn-hf.pdf pdf_icon

AP2302AGN-HF

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface mount package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

 5.1. Size:176K  ape
ap2302agn.pdf pdf_icon

AP2302AGN-HF

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2302A series are from Advanced Power innovated design andsilicon process technology to achieve the l

 7.1. Size:2068K  cn apm
ap2302ai.pdf pdf_icon

AP2302AGN-HF

AP2302AI 20V N-Channel Enhancement Mode MOSFET Description The AP2302AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS DR

 8.1. Size:96K  ape
ap2302gn-hf.pdf pdf_icon

AP2302AGN-HF

AP2302GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS CompliantSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistanc

Datasheet: AP20T15GI-HF , AP20T15GP-HF , AP22N13GH-HF , AP22T03GH-HF , AP2301AGN-HF , AP2301BGN-HF , AP2301GN-HF , AP2301N-HF , IRFB3607 , AP2302GN-HF , AP2303GN-HF , AP2304AGN-HF , AP2304GN-HF , AP2305AGN-HF , AP2305BGN-HF , AP2305CGN-HF , AP2305GN-HF .

History: SSF11NS60F | TK16C60W

Keywords - AP2302AGN-HF MOSFET datasheet

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