AP2311GK-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2311GK-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: SOT223

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AP2311GK-HF datasheet

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 ap2311gk-hf.pdf pdf_icon

AP2311GK-HF

AP2311GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Lower Gate Charge RDS(ON) 250m S Fast Switching Characteristic ID - 2.4A D RoHS Compliant & Halogen-Free SOT-223 G Description Advanced Power MOSFETs from APEC

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 ap2311gn.pdf pdf_icon

AP2311GK-HF

AP2311GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 7.2. Size:125K  ape
 ap2311gn-hf.pdf pdf_icon

AP2311GK-HF

AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi

 7.3. Size:3068K  cn vbsemi
 ap2311gn.pdf pdf_icon

AP2311GK-HF

AP2311GN www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/

MOSTRAR MÁS

Otros transistores... AP2309AGN-HF, AP2309GEN-HF, AP2309GN-HF, AP2310AGN-HF, AP2310CGN-HF, AP2310GG-HF, AP2310GK-HF, AP2310GN-HF, AON7403, AP2311GN-HF, AP2312GN, AP2313GN-HF, AP2314GN-HF, AP2315GEN, AP2316GN-HF, AP2317GN-HF, AP2318AGEN-HF