All MOSFET. AP2311GK-HF Datasheet

 

AP2311GK-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2311GK-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT223

 AP2311GK-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2311GK-HF Datasheet (PDF)

 ..1. Size:50K  ape
 ap2311gk-hf.pdf

AP2311GK-HF AP2311GK-HF

AP2311GK-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Lower Gate Charge RDS(ON) 250mS Fast Switching Characteristic ID - 2.4AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionAdvanced Power MOSFETs from APEC

 7.1. Size:120K  ape
 ap2311gn.pdf

AP2311GK-HF AP2311GK-HF

AP2311GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effec

 7.2. Size:125K  ape
 ap2311gn-hf.pdf

AP2311GK-HF AP2311GK-HF

AP2311GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8AS RoHS CompliantSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resi

 7.3. Size:3068K  cn vbsemi
 ap2311gn.pdf

AP2311GK-HF AP2311GK-HF

AP2311GNwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV/

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