AP2311GN-HF Todos los transistores

 

AP2311GN-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2311GN-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SOT23
 

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AP2311GN-HF Datasheet (PDF)

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 ap2311gn-hf.pdf pdf_icon

AP2311GN-HF

AP2311GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8AS RoHS CompliantSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resi

 6.1. Size:120K  ape
 ap2311gn.pdf pdf_icon

AP2311GN-HF

AP2311GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effec

 6.2. Size:3068K  cn vbsemi
 ap2311gn.pdf pdf_icon

AP2311GN-HF

AP2311GNwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV/

 7.1. Size:50K  ape
 ap2311gk-hf.pdf pdf_icon

AP2311GN-HF

AP2311GK-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Lower Gate Charge RDS(ON) 250mS Fast Switching Characteristic ID - 2.4AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionAdvanced Power MOSFETs from APEC

MOSTRAR MÁS

Otros transistores... AP2309GEN-HF , AP2309GN-HF , AP2310AGN-HF , AP2310CGN-HF , AP2310GG-HF , AP2310GK-HF , AP2310GN-HF , AP2311GK-HF , IRF9640 , AP2312GN , AP2313GN-HF , AP2314GN-HF , AP2315GEN , AP2316GN-HF , AP2317GN-HF , AP2318AGEN-HF , AP2318GEN-HF .

 

 
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