AP2311GN-HF MOSFET Datasheet: P-Ch, 60V, 1.8A. Full specification with pinout and replacement list

AP2311GN-HF Specs and Replacement

   Type Designator: AP2311GN-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT23

AP2311GN-HF substitution

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AP2311GN-HF datasheet

..1. Size:125K ape
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AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi... See More ⇒

6.1. Size:120K ape
ap2311gn.pdf pdf_icon

AP2311GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec... See More ⇒

6.2. Size:3068K cn vbsemi
ap2311gn.pdf pdf_icon

AP2311GN www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/... See More ⇒

7.1. Size:50K ape
ap2311gk-hf.pdf pdf_icon

AP2311GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Lower Gate Charge RDS(ON) 250m S Fast Switching Characteristic ID - 2.4A D RoHS Compliant & Halogen-Free SOT-223 G Description Advanced Power MOSFETs from APEC... See More ⇒

Detailed specifications: AP2309GEN-HF , AP2309GN-HF , AP2310AGN-HF , AP2310CGN-HF , AP2310GG-HF , AP2310GK-HF , AP2310GN-HF , AP2311GK-HF , K2611 , AP2312GN , AP2313GN-HF , AP2314GN-HF , AP2315GEN , AP2316GN-HF , AP2317GN-HF , AP2318AGEN-HF , AP2318GEN-HF .