2SK416L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK416L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 10 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 160 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET 2SK416L

2SK416L Datasheet (PDF)

..1. Size:354K inchange semiconductor
2sk416l.pdf

isc N-Channel MOSFET Transistor 2SK416LFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

8.1. Size:47K hitachi
2sk416s.pdf

8.2. Size:355K sanken-ele
2sk4161d.pdf

http://www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100A) (BR)DSS DR = 4.8m max. (V =10V, I =35A) DS(ON) GS DR = 6.0m max. (V =8V, I =35A) DS(ON)

8.3. Size:259K inchange semiconductor
2sk4161d.pdf

isc N-Channel MOSFET Transistor 2SK4161DFEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.8m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies .ABSOLUTE MAXIMUM

8.4. Size:286K inchange semiconductor
2sk416s.pdf

isc N-Channel MOSFET Transistor 2SK416SFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: