2SK416L Datasheet and Replacement
Type Designator: 2SK416L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DPAK
2SK416L substitution
2SK416L Datasheet (PDF)
2sk416l.pdf

isc N-Channel MOSFET Transistor 2SK416LFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk4161d.pdf

http://www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100A) (BR)DSS DR = 4.8m max. (V =10V, I =35A) DS(ON) GS DR = 6.0m max. (V =8V, I =35A) DS(ON)
2sk4161d.pdf

isc N-Channel MOSFET Transistor 2SK4161DFEATURESDrain Current I =100A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.8m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies .ABSOLUTE MAXIMUM
Datasheet: AP2434GN3-HF , 2SK4037 , 2SK404 , 2SK4042 , 2SK410 , 2SK413 , 2SK414 , 2SK415 , 12N60 , 2SK416S , 2SK417 , AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , AP2532GY , AP2533GY-HF .
History: RJK0602DPN-E0 | LNH2N65 | PE898BA | DMN3067LW | CS5N70U | TSF65R190S2 | LPSA3481
Keywords - 2SK416L MOSFET datasheet
2SK416L cross reference
2SK416L equivalent finder
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History: RJK0602DPN-E0 | LNH2N65 | PE898BA | DMN3067LW | CS5N70U | TSF65R190S2 | LPSA3481



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