2SK416S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK416S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: DPAK
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2SK416S datasheet
2sk416s.pdf
isc N-Channel MOSFET Transistor 2SK416S FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
2sk4161d.pdf
http //www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100 A) (BR)DSS D R = 4.8m max. (V =10V, I =35A) DS(ON) GS D R = 6.0m max. (V =8V, I =35A) DS(ON)
2sk4161d.pdf
isc N-Channel MOSFET Transistor 2SK4161D FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies . ABSOLUTE MAXIMUM
Otros transistores... 2SK4037, 2SK404, 2SK4042, 2SK410, 2SK413, 2SK414, 2SK415, 2SK416L, 2N7002, 2SK417, AP2451GY-HF, AP2530AGY-HF, AP2530GY-HF, AP2531GY, AP2532GY, AP2533GY-HF, AP2535GEY-HF
History: IXTH31N15MA | PMN22XN
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