2SK416S Specs and Replacement
Type Designator: 2SK416S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DPAK
2SK416S substitution
- MOSFET ⓘ Cross-Reference Search
2SK416S datasheet
2sk416s.pdf
isc N-Channel MOSFET Transistor 2SK416S FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
2sk4161d.pdf
http //www.sanken-ele.co.jp SANKEN ELECTRIC Mar. 2014 Features Package Low on-resistance TO-3P Built-in gate protection diode Applications Electric power steering High current switching Key Specifications V = 60V (I =100 A) (BR)DSS D R = 4.8m max. (V =10V, I =35A) DS(ON) GS D R = 6.0m max. (V =8V, I =35A) DS(ON)... See More ⇒
2sk4161d.pdf
isc N-Channel MOSFET Transistor 2SK4161D FEATURES Drain Current I =100A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 4.8m (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies . ABSOLUTE MAXIMUM ... See More ⇒
Detailed specifications: 2SK4037, 2SK404, 2SK4042, 2SK410, 2SK413, 2SK414, 2SK415, 2SK416L, 2N7002, 2SK417, AP2451GY-HF, AP2530AGY-HF, AP2530GY-HF, AP2531GY, AP2532GY, AP2533GY-HF, AP2535GEY-HF
Keywords - 2SK416S MOSFET specs
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History: NCE60PD05S
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