AP2535GEY-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2535GEY-HF
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.13 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.6(3.1) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7(13) nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032(0.08) Ohm
Encapsulados: SOT26
Búsqueda de reemplazo de AP2535GEY-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP2535GEY-HF datasheet
ap2535gey-hf.pdf
AP2535GEY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Capable of 1.8V Gate Drive N-CH BVDSS 20V S1 Lower Gate Charge RDS(ON) 32m D1 Fast Switching Performance ID 4.6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 SOT-26 RDS(ON) 80m Description ID -3.1A AP2535 series are from Advanced Powe
ap2535gey.pdf
AP2535GEY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Capable of 1.8V Gate Drive N-CH BVDSS 20V S1 Lower Gate Charge RDS(ON) 32m D1 Fast Switching Performance ID 4.6A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20V G1 SOT-26 RDS(ON) 80m Description ID -3.1A AP2535 series are from Advanced Powe
ap2530gy.pdf
AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 30V S1 Low On-resistance RDS(ON) 72m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V SOT-26 G1 RDS(ON) 150m Description ID -2.3A AP2530 series are from Advanced Power innovated desig
ap2531gy.pdf
AP2531GY RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge Drive N-CH BVDSS 16V S1 Low On-resistance RDS(ON) 58m D1 Surface Mount Package ID 3.5A G2 S2 P-CH BVDSS -16V SOT-26 G1 RDS(ON) 125m Description ID -2.5A Advanced Power MOSFETs utilized advanced processing techniques to achieve the low
Otros transistores... 2SK416S, 2SK417, AP2451GY-HF, AP2530AGY-HF, AP2530GY-HF, AP2531GY, AP2532GY, AP2533GY-HF, SPP20N60C3, AP25N10GH-HF, AP25N10GJ-HF, AP25N10GP-HF, AP25N10GS-HF, AP25P15GI, AP25P15GS-HF, AP2602GY, AP2603GY-HF
History: IRFR3410PBF
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
c3421 transistor | c644 transistor | fgpf4536 datasheet | p20nm60fp datasheet | 2sc1943 | 7408 mosfet | cs630 | 2sc2705 transistor
