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AP2535GEY-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2535GEY-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6(3.1) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7(13) nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032(0.08) Ohm
   Paquete / Cubierta: SOT26
 

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AP2535GEY-HF Datasheet (PDF)

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 ap2535gey-hf.pdf pdf_icon

AP2535GEY-HF

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe

 5.1. Size:226K  ape
 ap2535gey.pdf pdf_icon

AP2535GEY-HF

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe

 9.1. Size:189K  ape
 ap2530gy.pdf pdf_icon

AP2535GEY-HF

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig

 9.2. Size:120K  ape
 ap2531gy.pdf pdf_icon

AP2535GEY-HF

AP2531GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the low

MOSTRAR MÁS

Otros transistores... 2SK416S , 2SK417 , AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , AP2532GY , AP2533GY-HF , IRF9540N , AP25N10GH-HF , AP25N10GJ-HF , AP25N10GP-HF , AP25N10GS-HF , AP25P15GI , AP25P15GS-HF , AP2602GY , AP2603GY-HF .

History: FW202 | STI28N60M2 | AONV420A60 | SWD8N70K | 15N70 | AONR21311C | SIZ920DT

 

 
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