AP2535GEY-HF - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP2535GEY-HF
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 1.13 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.6(3.1) A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7(13) ns
Cossⓘ - Выходная емкость: 70 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.032(0.08) Ohm
Тип корпуса: SOT26
Аналог (замена) для AP2535GEY-HF
AP2535GEY-HF Datasheet (PDF)
ap2535gey-hf.pdf

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe
ap2535gey.pdf

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe
ap2530gy.pdf

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig
ap2531gy.pdf

AP2531GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the low
Другие MOSFET... 2SK416S , 2SK417 , AP2451GY-HF , AP2530AGY-HF , AP2530GY-HF , AP2531GY , AP2532GY , AP2533GY-HF , IRF9540N , AP25N10GH-HF , AP25N10GJ-HF , AP25N10GP-HF , AP25N10GS-HF , AP25P15GI , AP25P15GS-HF , AP2602GY , AP2603GY-HF .
History: 2SK1268 | AOSX32128 | AONP38324 | WMJ36N60C4 | JMSH0606PGDQ | BSB053N03LPG | AO3401MI-MS
History: 2SK1268 | AOSX32128 | AONP38324 | WMJ36N60C4 | JMSH0606PGDQ | BSB053N03LPG | AO3401MI-MS



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