All MOSFET. AP2535GEY-HF Datasheet

 

AP2535GEY-HF Datasheet and Replacement


   Type Designator: AP2535GEY-HF
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.6(3.1) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7(13) nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032(0.08) Ohm
   Package: SOT26
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AP2535GEY-HF Datasheet (PDF)

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AP2535GEY-HF

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe

 5.1. Size:226K  ape
ap2535gey.pdf pdf_icon

AP2535GEY-HF

AP2535GEY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Capable of 1.8V Gate Drive N-CH BVDSS 20VS1 Lower Gate Charge RDS(ON) 32mD1 Fast Switching Performance ID 4.6AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -20VG1SOT-26RDS(ON) 80mDescription ID -3.1AAP2535 series are from Advanced Powe

 9.1. Size:189K  ape
ap2530gy.pdf pdf_icon

AP2535GEY-HF

AP2530GY-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 30VS1 Low On-resistance RDS(ON) 72mD1 Surface Mount Package ID 3.3AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VSOT-26 G1RDS(ON) 150mDescription ID -2.3AAP2530 series are from Advanced Power innovated desig

 9.2. Size:120K  ape
ap2531gy.pdf pdf_icon

AP2535GEY-HF

AP2531GYRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge Drive N-CH BVDSS 16VS1 Low On-resistance RDS(ON) 58mD1 Surface Mount Package ID 3.5AG2S2P-CH BVDSS -16VSOT-26 G1RDS(ON) 125mDescription ID -2.5AAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the low

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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