AP2N7002K-HF Todos los transistores

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AP2N7002K-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2N7002K-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.7 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 8 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: SOT23

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AP2N7002K-HF Datasheet (PDF)

1.1. ap2n7002k-hf.pdf Size:58K _a-power

AP2N7002K-HF
AP2N7002K-HF

AP2N7002K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Small Package Outline RDS(ON) 2? Ў Surface Mount Device ID 450mA S Ў RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ex

1.2. ap2n7002ku.pdf Size:100K _a-power

AP2N7002K-HF
AP2N7002K-HF

AP2N7002KU Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Small Package Outline RDS(ON) 2Ω ▼ Surface Mount Device ID 270mA S ▼ RoHS Compliant & Halogen-Free SOT-323 G D Description AP2N7002 series are from Advanced Power innovated design G and silicon process technology to achieve th

 

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