AP2N7002K-HF Datasheet and Replacement
Type Designator: AP2N7002K-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT23
AP2N7002K-HF substitution
AP2N7002K-HF Datasheet (PDF)
ap2n7002k-hf.pdf

AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist
ap2n7002ku.pdf

AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th
Datasheet: AP2764AI-A-HF , AP2764AI-HF , AP2764AP-A-HF , AP2764I-A , AP2765I-A-HF , AP2851GO , AP2852GO , AP2864I-A-HF , AO4468 , AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , AP30N30W , AP30N30WI .
History: WFF630 | AM2341P | P0804BVG | BL40N30L-W | WFF12N70S | FTK830F | FQI2N90TU
Keywords - AP2N7002K-HF MOSFET datasheet
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History: WFF630 | AM2341P | P0804BVG | BL40N30L-W | WFF12N70S | FTK830F | FQI2N90TU



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