All MOSFET. AP2N7002K-HF Datasheet

 

AP2N7002K-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2N7002K-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT23

 AP2N7002K-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2N7002K-HF Datasheet (PDF)

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 ap2n7002k-hf.pdf

AP2N7002K-HF AP2N7002K-HF

AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist

 5.1. Size:100K  ape
 ap2n7002ku.pdf

AP2N7002K-HF AP2N7002K-HF

AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th

 6.1. Size:1560K  allpower
 ap2n7002.pdf

AP2N7002K-HF AP2N7002K-HF

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History: IRFB9N30APBF | BL4N60A-P

 

 
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