AP2N7002K-HF Specs and Replacement
Type Designator: AP2N7002K-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT23
AP2N7002K-HF substitution
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AP2N7002K-HF datasheet
ap2n7002k-hf.pdf
AP2N7002K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mA S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist... See More ⇒
ap2n7002ku.pdf
AP2N7002KU Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mA S RoHS Compliant & Halogen-Free SOT-323 G D Description AP2N7002 series are from Advanced Power innovated design G and silicon process technology to achieve th... See More ⇒
Detailed specifications: AP2764AI-A-HF, AP2764AI-HF, AP2764AP-A-HF, AP2764I-A, AP2765I-A-HF, AP2851GO, AP2852GO, AP2864I-A-HF, 60N06, AP2R403AGMT-HF, AP2R403GMT-HF, AP2R803AGMT-HF, AP2R803GH-HF, AP2R803GMT-HF, AP2RA04GMT-HF, AP30N30W, AP30N30WI
Keywords - AP2N7002K-HF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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