AP2R803AGMT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2R803AGMT-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: PMPAK5X6

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AP2R803AGMT-HF datasheet

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 ap2r803agmt-hf.pdf pdf_icon

AP2R803AGMT-HF

AP2R803AGMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3m Low On-resistance ID 105A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

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 ap2r803gh.pdf pdf_icon

AP2R803AGMT-HF

AP2R803GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best G D combination of fast switching, ruggedized device design, low on-resista

 7.2. Size:59K  ape
 ap2r803gmt-hf.pdf pdf_icon

AP2R803AGMT-HF

AP2R803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105A G RoHS Compliant & Halogen-Free S D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 7.3. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803AGMT-HF

AP2R803GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75A G RoHS Compliant & Halogen-Free S Description AP2R803 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

MOSTRAR MÁS

Otros transistores... AP2764I-A, AP2765I-A-HF, AP2851GO, AP2852GO, AP2864I-A-HF, AP2N7002K-HF, AP2R403AGMT-HF, AP2R403GMT-HF, IRF730, AP2R803GH-HF, AP2R803GMT-HF, AP2RA04GMT-HF, AP30N30W, AP30N30WI, AP30P10GH-HF, AP30P10GI, AP30P10GP-HF