All MOSFET. AP2R803AGMT-HF Datasheet

 

AP2R803AGMT-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP2R803AGMT-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PMPAK5X6

 AP2R803AGMT-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2R803AGMT-HF Datasheet (PDF)

 ..1. Size:96K  ape
 ap2r803agmt-hf.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin

 7.1. Size:93K  ape
 ap2r803gh.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGDcombination of fast switching, ruggedized device design, low on-resista

 7.2. Size:59K  ape
 ap2r803gmt-hf.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

 7.3. Size:137K  ape
 ap2r803gjb.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75AG RoHS Compliant & Halogen-FreeSDescriptionAP2R803 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 7.4. Size:93K  ape
 ap2r803gh-hf.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, rugg

 7.5. Size:118K  ape
 ap2r803gm-hf.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 3.2mD Fast Switching Characteristic ID 22.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP2R803 series are from Advanced Power innovated design and siliconprocess tech

 7.6. Size:125K  ape
 ap2r803gs-hf.pdf

AP2R803AGMT-HF AP2R803AGMT-HF

AP2R803GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedize

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