AP30N30W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP30N30W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 36 nS
Cossⓘ - Capacitancia de salida: 550 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de AP30N30W MOSFET
- Selecciónⓘ de transistores por parámetros
AP30N30W datasheet
..1. Size:110K ape
ap30n30w.pdf 
AP30N30W Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 250V Simple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS Compliant S Description AP30N30 from APEC provide the designer with the best combination of fas
0.1. Size:111K ape
ap30n30wi.pdf
AP30N30WI Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 250V Simple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS Compliant S Description AP30N30 from APEC provide the designer with the best combination of f
9.3. Size:1427K cn apm
ap30n06df.pdf
AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R
9.4. Size:1476K cn apm
ap30n06y.pdf
AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R
9.5. Size:1645K cn apm
ap30n06p ap30n06t.pdf
AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R
9.6. Size:1317K cn apm
ap30n10y.pdf
AP30N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =30A DS D R
9.7. Size:1455K cn apm
ap30n10d.pdf
AP30N10D 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 30A DS D R
9.8. Size:1290K cn apm
ap30n03df.pdf
AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R
9.9. Size:1255K cn apm
ap30n20p.pdf
AP30N20P 200V N-Channel Enhancement Mode MOSFET Description The AP30N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener
9.10. Size:1207K cn apm
ap30n06d.pdf
AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R
9.11. Size:1316K cn apm
ap30n02d.pdf
AP30N02D 20V N-Channel Enhancement Mode MOSFET Description The AP30N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =30A DS D R = 11m @ V =4.5V DS(ON) GS Application
9.12. Size:1556K cn apm
ap30n15d.pdf
AP30N15D 150V N-Channel Enhancement Mode MOSFET Description The AP30N15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =30 A DS D R
Otros transistores... AP2864I-A-HF, AP2N7002K-HF, AP2R403AGMT-HF, AP2R403GMT-HF, AP2R803AGMT-HF, AP2R803GH-HF, AP2R803GMT-HF, AP2RA04GMT-HF, IRF840, AP30N30WI, AP30P10GH-HF, AP30P10GI, AP30P10GP-HF, AP30P10GS, AP30T03GH-HF, AP30T10GH-HF, AP30T10GI-HF
