All MOSFET. AP30N30W Datasheet

 

AP30N30W Datasheet and Replacement


   Type Designator: AP30N30W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO3P
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AP30N30W Datasheet (PDF)

 ..1. Size:110K  ape
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AP30N30W

AP30N30WPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combination of fas

 0.1. Size:111K  ape
 ap30n30wi.pdf pdf_icon

AP30N30W

AP30N30WIPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combinationof f

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STD4NK60ZT4

Keywords - AP30N30W MOSFET datasheet

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