All MOSFET. AP30N30W Datasheet

 

AP30N30W Datasheet and Replacement


   Type Designator: AP30N30W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO3P
 

 AP30N30W substitution

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AP30N30W Datasheet (PDF)

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AP30N30W

AP30N30WPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combination of fas

 0.1. Size:111K  ape
 ap30n30wi.pdf pdf_icon

AP30N30W

AP30N30WIPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Avalanche Test BVDSS 250VSimple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS CompliantSDescriptionAP30N30 from APEC provide the designer with the best combinationof f

Datasheet: AP2864I-A-HF , AP2N7002K-HF , AP2R403AGMT-HF , AP2R403GMT-HF , AP2R803AGMT-HF , AP2R803GH-HF , AP2R803GMT-HF , AP2RA04GMT-HF , IRF840 , AP30N30WI , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , AP30P10GS , AP30T03GH-HF , AP30T10GH-HF , AP30T10GI-HF .

History: FTK2N65P

Keywords - AP30N30W MOSFET datasheet

 AP30N30W cross reference
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