AP40T10GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP40T10GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TO220F

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AP40T10GI-HF Datasheet (PDF)

..1. Size:94K ape
ap40t10gi-hf.pdf

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Single Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD

5.1. Size:212K ape
ap40t10gi.pdf

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Simple Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID3 40AGSDescriptionAP40T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDresistance

6.1. Size:55K ape
ap40t10gh-hf.pdf

AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGDAdvanced Power MOSFETs from APEC provide the designer withSTO-252(H)the best combination of fast switching, ru

6.2. Size:93K ape
ap40t10gr.pdf

AP40T10GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

6.3. Size:146K ape
ap40t10gp.pdf

AP40T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105VD Simple Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS Compliant & Halogen-FreeSDescriptionAP40T10 series are from Advanced Power innova

6.4. Size:197K ape
ap40t10gh.pdf

AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGAP40T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology to achieve the

6.5. Size:92K ape
ap40t10gp-hf.pdf

AP40T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 105VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device desi

6.6. Size:818K cn vbsemi
ap40t10gh.pdf

AP40T10GHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

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