AP40T10GI-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP40T10GI-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 37.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 64 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
AP40T10GI-HF Datasheet (PDF)
ap40t10gi-hf.pdf

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Single Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD
ap40t10gi.pdf

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Simple Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID3 40AGSDescriptionAP40T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDresistance
ap40t10gh-hf.pdf

AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGDAdvanced Power MOSFETs from APEC provide the designer withSTO-252(H)the best combination of fast switching, ru
ap40t10gr.pdf

AP40T10GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: RLP1N06CLE | 2SJ152 | VS3620DP-G | NTMFS4925NT1G | SDF07N80 | SHD226309 | ZVN3310F
History: RLP1N06CLE | 2SJ152 | VS3620DP-G | NTMFS4925NT1G | SDF07N80 | SHD226309 | ZVN3310F



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