All MOSFET. AP40T10GI-HF Datasheet

 

AP40T10GI-HF Datasheet and Replacement


   Type Designator: AP40T10GI-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO220F
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AP40T10GI-HF Datasheet (PDF)

 ..1. Size:94K  ape
 ap40t10gi-hf.pdf pdf_icon

AP40T10GI-HF

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Single Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-GD

 5.1. Size:212K  ape
 ap40t10gi.pdf pdf_icon

AP40T10GI-HF

AP40T10GI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 100V Simple Drive Requirement RDS(ON) 36m Fast Switching Characteristic ID3 40AGSDescriptionAP40T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GDresistance

 6.1. Size:55K  ape
 ap40t10gh-hf.pdf pdf_icon

AP40T10GI-HF

AP40T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 39AG RoHS CompliantSDescriptionGDAdvanced Power MOSFETs from APEC provide the designer withSTO-252(H)the best combination of fast switching, ru

 6.2. Size:93K  ape
 ap40t10gr.pdf pdf_icon

AP40T10GI-HF

AP40T10GRRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 100VD Single Drive Requirement RDS(ON) 35m Fast Switching Characteristic ID 40AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resist

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Keywords - AP40T10GI-HF MOSFET datasheet

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