AP4228GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP4228GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 7.7 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SO8

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AP4228GM Datasheet (PDF)

..1. Size:227K ape
ap4228gm.pdf

AP4228GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 26mD1 Fast Switching Characteristic ID 6.8AS2G2G1SO-8 S1D2D1DescriptionG2G1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,S1

..2. Size:851K cn vbsemi
ap4228gm.pdf

AP4228GMwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

0.1. Size:198K ape
ap4228gm-hf.pdf

AP4228GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 26mD1 Fast Switching Characteristic ID 6.8AS2G2 RoHS CompliantG1SO-8 S1D2D1DescriptionG2G1Advanced Power MOSFETs from APEC provide the designer withthe best combination of

9.1. Size:74K ape
ap4224lgm-hf-pre.pdf

AP4224LGM-HFPreliminaryAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 14mD1 Dual N MOSFET Package ID 10AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide the designerD2D1with the best combination of

9.2. Size:95K ape
ap4224gm-hf.pdf

AP4224GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 14mD1 Dual N MOSFET Package ID 10AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combinat

9.3. Size:206K ape
ap4226agm.pdf

AP4226AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.7AG2S2G1SO-8 S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized devic

9.4. Size:226K ape
ap4224lgm.pdf

AP4224LGMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 24mD1 Dual N MOSFET Package ID 7.1AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP4224 series are from Advanced Power innovated design andD2D1silicon process

9.5. Size:96K ape
ap4224gm.pdf

AP4224GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 14mD1D1 Dual N MOSFET Package ID 10AG2 RoHS CompliantS2G1SO-8S1DescriptionThe Advanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast swit

9.6. Size:94K ape
ap4226agm-hf.pdf

AP4226AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30V Simple Drive Requirement RDS(ON) 18m Dual N MOSFET Package ID 8.7A Halogen Free & RoHS Compliant ProductD2D2D1Description D1Advanced Power MOSFETs from APEC provide theG2designer with the best combination of fast switching,

9.7. Size:71K ape
ap4226gm.pdf

AP4226GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.2AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the bes

9.8. Size:57K ape
ap4226gm-hf.pdf

AP4226GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 18mD1 Dual N MOSFET Package ID 8.2AG2S2 RoHS CompliantG1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchi

9.9. Size:93K ape
ap4224agm.pdf

AP4224AGMRoHS-compliant ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS 30VD2D2 Simple Drive Requirement RDS(ON) 15mD1D1ID 9.2AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,ruggedized device design, ultra low

9.10. Size:98K ape
ap4226bgm-hf.pdf

AP4226BGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Lower On-resistance BVDSS 30VD2D2D1 Simple Drive Requirement RDS(ON) 11mD1 Fast Switching Characteristic ID 10.7AG2S2 Halogen Free & RoHS CompliantG1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe

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