All MOSFET. AP4228GM Datasheet

 

AP4228GM MOSFET. Datasheet pdf. Equivalent

Type Designator: AP4228GM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: SO8

AP4228GM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP4228GM Datasheet (PDF)

1.1. ap4228gm.pdf Size:227K _a-power

AP4228GM
AP4228GM

AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 26m? D1 Ў Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1 S2 rug

5.1. ap4226agm.pdf Size:206K _a-power

AP4228GM
AP4228GM

AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

5.2. ap4226gm.pdf Size:71K _a-power

AP4228GM
AP4228GM

AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of

5.3. ap4226bgm-hf.pdf Size:98K _a-power

AP4228GM
AP4228GM

AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best com

5.4. ap4224lgm-hf-pre.pdf Size:74K _a-power

AP4228GM
AP4228GM

AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 14m? D1 Ў Dual N MOSFET Package ID 10A G2 S2 Ў RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of fast sw

5.5. ap4224gm.pdf Size:96K _a-power

AP4228GM
AP4228GM

AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 14m? D1 D1 Ў Dual N MOSFET Package ID 10A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching,

5.6. ap4224agm.pdf Size:93K _a-power

AP4228GM
AP4228GM

AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 15m? D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-res

Datasheet: AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , AP4226GM , 2SK2837 , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP .

 


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