AP4434AGYT-HF Todos los transistores

 

AP4434AGYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4434AGYT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: PMPAK3X3
 

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AP4434AGYT-HF Datasheet (PDF)

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 ap4434agyt-hf.pdf pdf_icon

AP4434AGYT-HF

AP4434AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8AGDSDDDescriptionDAP4434A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on

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 ap4434agh-hf-pre.pdf pdf_icon

AP4434AGYT-HF

AP4434AGH-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGThe Advanced Power MOSFETs from APEC provide theD

 6.2. Size:95K  ape
 ap4434agm-hf.pdf pdf_icon

AP4434AGYT-HF

AP4434AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VDDD Capable of 1.8V Gate Drive RDS(ON) 22mD Fast Switching Characteristic ID 8.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

 8.1. Size:176K  ape
 ap4434gm.pdf pdf_icon

AP4434AGYT-HF

AP4434GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VDDD Capable of 2.5V gate drive RDS(ON) 18.5mD Surface mount package ID 8.3AGSSSSO-8DDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,Sruggedized devi

MOSTRAR MÁS

Otros transistores... AP4428GM , AP4429GM-HF , AP4430GEM , AP4430GM-HF , AP4432GM , AP4433GM-HF , AP4434AGH-HF , AP4434AGM-HF , 5N60 , AP4434GH-HF , AP4434GM , AP4435GH-HF , AP4435GJ-HF , AP4435GM-HF , AP4435GYT-HF , AP4436GM , AP4437GM-HF .

History: IRF5851TR | SSP70R300S2 | MSF9N70 | BRCS4N65AA | BXL4004 | MMBF0202PLT1 | IRF610P

 

 
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