AP4434AGYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4434AGYT-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 10.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: PMPAK3X3

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AP4434AGYT-HF datasheet

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 ap4434agyt-hf.pdf pdf_icon

AP4434AGYT-HF

AP4434AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8A G D S D D Description D AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on

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 ap4434agh-hf-pre.pdf pdf_icon

AP4434AGYT-HF

AP4434AGH-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G The Advanced Power MOSFETs from APEC provide the D

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 ap4434agm-hf.pdf pdf_icon

AP4434AGYT-HF

AP4434AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D D D Capable of 1.8V Gate Drive RDS(ON) 22m D Fast Switching Characteristic ID 8.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

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 ap4434gm.pdf pdf_icon

AP4434AGYT-HF

AP4434GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D D D Capable of 2.5V gate drive RDS(ON) 18.5m D Surface mount package ID 8.3A G S S S SO-8 D Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized devi

MOSTRAR MÁS

Otros transistores... AP4428GM, AP4429GM-HF, AP4430GEM, AP4430GM-HF, AP4432GM, AP4433GM-HF, AP4434AGH-HF, AP4434AGM-HF, AON7410, AP4434GH-HF, AP4434GM, AP4435GH-HF, AP4435GJ-HF, AP4435GM-HF, AP4435GYT-HF, AP4436GM, AP4437GM-HF