AP4434AGYT-HF. Аналоги и основные параметры

Наименование производителя: AP4434AGYT-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 3.13 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 165 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm

Тип корпуса: PMPAK3X3

Аналог (замена) для AP4434AGYT-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP4434AGYT-HF даташит

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 ap4434agyt-hf.pdf pdf_icon

AP4434AGYT-HF

AP4434AGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8A G D S D D Description D AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on

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 ap4434agh-hf-pre.pdf pdf_icon

AP4434AGYT-HF

AP4434AGH-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G The Advanced Power MOSFETs from APEC provide the D

 6.2. Size:95K  ape
 ap4434agm-hf.pdf pdf_icon

AP4434AGYT-HF

AP4434AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20V D D D Capable of 1.8V Gate Drive RDS(ON) 22m D Fast Switching Characteristic ID 8.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.1. Size:176K  ape
 ap4434gm.pdf pdf_icon

AP4434AGYT-HF

AP4434GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D D D Capable of 2.5V gate drive RDS(ON) 18.5m D Surface mount package ID 8.3A G S S S SO-8 D Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized devi

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