AP4434AGYT-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4434AGYT-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.13
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 10.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.5
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
PMPAK3X3
AP4434AGYT-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4434AGYT-HF
Datasheet (PDF)
..1. Size:60K ape
ap4434agyt-hf.pdf
AP4434AGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 20VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.8AGDSDDDescriptionDAP4434A series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on
6.1. Size:76K ape
ap4434agh-hf-pre.pdf
AP4434AGH-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGThe Advanced Power MOSFETs from APEC provide theD
6.2. Size:95K ape
ap4434agm-hf.pdf
AP4434AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VDDD Capable of 1.8V Gate Drive RDS(ON) 22mD Fast Switching Characteristic ID 8.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of
8.1. Size:176K ape
ap4434gm.pdf
AP4434GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VDDD Capable of 2.5V gate drive RDS(ON) 18.5mD Surface mount package ID 8.3AGSSSSO-8DDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,Sruggedized devi
8.2. Size:76K ape
ap4434gh-hf.pdf
AP4434GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Fast Switching Characteristic ID 21AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fast
8.3. Size:93K ape
ap4434gm-hf.pdf
AP4434GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Surface Mount Package ID 8.3AG Halogen Free & RoHS Compliant ProductSDescriptionDDAdvanced Power MOSFETs from APEC provide theDDdesigner with the best combination of fast switch
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