AP4434GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4434GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm

Encapsulados: SO8

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AP4434GM datasheet

 ..1. Size:176K  ape
 ap4434gm.pdf pdf_icon

AP4434GM

AP4434GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D D D Capable of 2.5V gate drive RDS(ON) 18.5m D Surface mount package ID 8.3A G S S S SO-8 D Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized devi

 0.1. Size:93K  ape
 ap4434gm-hf.pdf pdf_icon

AP4434GM

AP4434GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Surface Mount Package ID 8.3A G Halogen Free & RoHS Compliant Product S Description D D Advanced Power MOSFETs from APEC provide the D D designer with the best combination of fast switch

 7.1. Size:76K  ape
 ap4434gh-hf.pdf pdf_icon

AP4434GM

AP4434GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Fast Switching Characteristic ID 21A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fast

 8.1. Size:76K  ape
 ap4434agh-hf-pre.pdf pdf_icon

AP4434GM

AP4434AGH-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G The Advanced Power MOSFETs from APEC provide the D

MOSTRAR MÁS

Otros transistores... AP4430GEM, AP4430GM-HF, AP4432GM, AP4433GM-HF, AP4434AGH-HF, AP4434AGM-HF, AP4434AGYT-HF, AP4434GH-HF, 5N65, AP4435GH-HF, AP4435GJ-HF, AP4435GM-HF, AP4435GYT-HF, AP4436GM, AP4437GM-HF, AP4438AGM-HF, AP4438BGM-HF