AP4434GM Todos los transistores

 

AP4434GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4434GM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm
   Paquete / Cubierta: SO8
 

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AP4434GM Datasheet (PDF)

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 ap4434gm.pdf pdf_icon

AP4434GM

AP4434GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low on-resistance BVDSS 20VDDD Capable of 2.5V gate drive RDS(ON) 18.5mD Surface mount package ID 8.3AGSSSSO-8DDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,Sruggedized devi

 0.1. Size:93K  ape
 ap4434gm-hf.pdf pdf_icon

AP4434GM

AP4434GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Surface Mount Package ID 8.3AG Halogen Free & RoHS Compliant ProductSDescriptionDDAdvanced Power MOSFETs from APEC provide theDDdesigner with the best combination of fast switch

 7.1. Size:76K  ape
 ap4434gh-hf.pdf pdf_icon

AP4434GM

AP4434GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 2.5V Gate Drive RDS(ON) 18.5m Fast Switching Characteristic ID 21AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDSTO-252(H)best combination of fast

 8.1. Size:76K  ape
 ap4434agh-hf-pre.pdf pdf_icon

AP4434GM

AP4434AGH-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 20V Capable of 1.8V Gate Drive RDS(ON) 22m Fast Switching Characteristic ID 25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGThe Advanced Power MOSFETs from APEC provide theD

MOSTRAR MÁS

Otros transistores... AP4430GEM , AP4430GM-HF , AP4432GM , AP4433GM-HF , AP4434AGH-HF , AP4434AGM-HF , AP4434AGYT-HF , AP4434GH-HF , 4435 , AP4435GH-HF , AP4435GJ-HF , AP4435GM-HF , AP4435GYT-HF , AP4436GM , AP4437GM-HF , AP4438AGM-HF , AP4438BGM-HF .

History: SSM4501GSD | SSM5N05FU | TPV65R160C | PE5A1BA | IRF3709 | SI8817DB | HGA155N15S

 

 
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