AP4434GM MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4434GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 8.3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 175 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0185 Ohm
Package: SO8
AP4434GM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4434GM Datasheet (PDF)
0.1. ap4434gm-hf.pdf 
Size:93K _ape
AP4434GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 18.5mΩ ▼ Surface Mount Package ID 8.3A G ▼ Halogen Free & RoHS Compliant Product S Description D D Advanced Power MOSFETs from APEC provide the D D designer with the best combination of fast switch
0.2. ap4434gm.pdf Size:176K _ape
AP4434GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low on-resistance BVDSS 20V D D D ▼ Capable of 2.5V gate drive RDS(ON) 18.5mΩ D ▼ Surface mount package ID 8.3A G S S S SO-8 D Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, S ruggedized devi
7.1. ap4434gh-hf.pdf Size:76K _ape
AP4434GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Lower Gate Charge D BVDSS 20V ▼ Capable of 2.5V Gate Drive RDS(ON) 18.5mΩ ▼ Fast Switching Characteristic ID 21A G ▼ RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of fast
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
