AP4435GYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4435GYT-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: PMPAK3X3

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AP4435GYT-HF datasheet

 ..1. Size:95K  ape
 ap4435gyt-hf.pdf pdf_icon

AP4435GYT-HF

AP4435GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device des

 7.1. Size:202K  ape
 ap4435gm-hf.pdf pdf_icon

AP4435GYT-HF

AP4435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 20m D Fast Switching Characteristic ID -9A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 7.2. Size:214K  ape
 ap4435gh ap4435gj.pdf pdf_icon

AP4435GYT-HF

AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltag

 7.3. Size:100K  ape
 ap4435gh-hf ap4435gj-hf.pdf pdf_icon

AP4435GYT-HF

AP4435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

MOSTRAR MÁS

Otros transistores... AP4434AGH-HF, AP4434AGM-HF, AP4434AGYT-HF, AP4434GH-HF, AP4434GM, AP4435GH-HF, AP4435GJ-HF, AP4435GM-HF, IRF530, AP4436GM, AP4437GM-HF, AP4438AGM-HF, AP4438BGM-HF, AP4438CGM-HF, AP4438GM-HF, AP4438GSM-HF, AP4438GYT-HF