AP4435GYT-HF Specs and Replacement

Type Designator: AP4435GYT-HF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: PMPAK3X3

AP4435GYT-HF substitution

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AP4435GYT-HF datasheet

 ..1. Size:95K  ape
ap4435gyt-hf.pdf pdf_icon

AP4435GYT-HF

AP4435GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device des... See More ⇒

 7.1. Size:202K  ape
ap4435gm-hf.pdf pdf_icon

AP4435GYT-HF

AP4435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low On-resistance RDS(ON) 20m D Fast Switching Characteristic ID -9A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ... See More ⇒

 7.2. Size:214K  ape
ap4435gh ap4435gj.pdf pdf_icon

AP4435GYT-HF

AP4435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltag... See More ⇒

 7.3. Size:100K  ape
ap4435gh-hf ap4435gj-hf.pdf pdf_icon

AP4435GYT-HF

AP4435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,... See More ⇒

Detailed specifications: AP4434AGH-HF, AP4434AGM-HF, AP4434AGYT-HF, AP4434GH-HF, AP4434GM, AP4435GH-HF, AP4435GJ-HF, AP4435GM-HF, IRF530, AP4436GM, AP4437GM-HF, AP4438AGM-HF, AP4438BGM-HF, AP4438CGM-HF, AP4438GM-HF, AP4438GSM-HF, AP4438GYT-HF

Keywords - AP4435GYT-HF MOSFET specs

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