AP4435GYT-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP4435GYT-HF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.57
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 7.5
nS
Cossⓘ -
Output Capacitance: 245
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
PMPAK3X3
AP4435GYT-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4435GYT-HF
Datasheet (PDF)
..1. Size:95K ape
ap4435gyt-hf.pdf 
AP4435GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -11AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device des
7.1. Size:202K ape
ap4435gm-hf.pdf
AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
7.2. Size:214K ape
ap4435gh ap4435gj.pdf
AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag
7.3. Size:100K ape
ap4435gh-hf ap4435gj-hf.pdf
AP4435GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,
7.4. Size:54K ape
ap4435gm.pdf
AP4435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching Characteristic ID -9AGSSSO-8 SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d
7.5. Size:819K cn vbsemi
ap4435gj.pdf
AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop
7.6. Size:2937K cn vbsemi
ap4435gm.pdf
AP4435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
