2SK579S Todos los transistores

 ..1. Size:286K  inchange semiconductor
 2sk579s.pdf

isc N-Channel MOSFET Transistor 2SK579S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:49K  hitachi
 2sk579 2sk580.pdf

 8.2. Size:354K  inchange semiconductor
 2sk579l.pdf

isc N-Channel MOSFET Transistor 2SK579L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.1. Size:232K  toshiba
 2sk578.pdf

 9.2. Size:284K  inchange semiconductor
 2sk578.pdf

isc N-Channel MOSFET Transistor 2SK578 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.22 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi