2SK579S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK579S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET 2SK579S
2SK579S Datasheet (PDF)
2sk579s.pdf
isc N-Channel MOSFET Transistor 2SK579SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk579l.pdf
isc N-Channel MOSFET Transistor 2SK579LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk578.pdf
isc N-Channel MOSFET Transistor 2SK578FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.22(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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