All MOSFET. 2SK579S Datasheet

 

2SK579S Datasheet and Replacement


   Type Designator: 2SK579S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: DPAK
 

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2SK579S Datasheet (PDF)

 ..1. Size:286K  inchange semiconductor
 2sk579s.pdf pdf_icon

2SK579S

isc N-Channel MOSFET Transistor 2SK579SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.1. Size:49K  hitachi
 2sk579 2sk580.pdf pdf_icon

2SK579S

 8.2. Size:354K  inchange semiconductor
 2sk579l.pdf pdf_icon

2SK579S

isc N-Channel MOSFET Transistor 2SK579LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.1. Size:232K  toshiba
 2sk578.pdf pdf_icon

2SK579S

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Datasheet: AP4563GM , AP4569GD , 2SK56 , 2SK559 , 2SK560 , 2SK578 , 2SK579L , 2SK580L , IRLZ44N , 2SK580S , 2SK583 , 2SK620 , 2SK655 , 2SK656 , 2SK657 , AP4569GH , AP4569GM .

History: CEA3055L | PSMN5R0-100ES | P5510EK | LSB80R350GT | SM2208NSQG | OSG65R340DZF | IXTY08N100P

Keywords - 2SK579S MOSFET datasheet

 2SK579S cross reference
 2SK579S equivalent finder
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 2SK579S substitution
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