AP4957GM MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP4957GM datasheet

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ap4957gm.pdf pdf_icon

AP4957GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 24m D1 D1 Dual P MOSFET Package ID -7.7A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the b

8.1. Size:95K ape
ap4957agm-hf.pdf pdf_icon

AP4957AGM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best com

8.2. Size:178K ape
ap4957agm.pdf pdf_icon

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de

8.3. Size:1931K cn apm
ap4957a.pdf pdf_icon

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS D R

Otros transistores... AP4924GM , AP4933GM-HF , AP4936GM , AP4951GM , AP4951GM-HF , AP4953GM-HF , AP4955GM , AP4957AGM , IRFP064N , AP4959GM , AP4961GM , AP4963GEM-HF , AP9467AGH-HF , AP9467AGM-HF , AP9467AGMT-HF , AP9467GH-HF , AP9467GJ-HF .