AP4957GM MOSFET Datasheet: P-Ch, 30V, 7.7A. Full specification with pinout and replacement list

AP4957GM Specs and Replacement

Type Designator: AP4957GM

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SO8

AP4957GM substitution

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AP4957GM datasheet

..1. Size:72K ape
ap4957gm.pdf pdf_icon

AP4957GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 24m D1 D1 Dual P MOSFET Package ID -7.7A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the b... See More ⇒

8.1. Size:95K ape
ap4957agm-hf.pdf pdf_icon

AP4957AGM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best com... See More ⇒

8.2. Size:178K ape
ap4957agm.pdf pdf_icon

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de... See More ⇒

8.3. Size:1931K cn apm
ap4957a.pdf pdf_icon

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS D R ... See More ⇒

Detailed specifications: AP4924GM, AP4933GM-HF, AP4936GM, AP4951GM, AP4951GM-HF, AP4953GM-HF, AP4955GM, AP4957AGM, IRFP064N, AP4959GM, AP4961GM, AP4963GEM-HF, AP9467AGH-HF, AP9467AGM-HF, AP9467AGMT-HF, AP9467GH-HF, AP9467GJ-HF