AP9467AGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9467AGM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
Paquete / Cubierta: SO8
- Selección de transistores por parámetros
AP9467AGM-HF Datasheet (PDF)
ap9467agm-hf.pdf

AP9467AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap9467agmt-hf.pdf

AP9467AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 11.5m Low On-resistance ID 38AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast
ap9467agm.pdf

AP9467AGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9467A series are fro
ap9467agh.pdf

AP9467AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43AG Halogen Free & RoHS CompliantSDescriptionAP9467A series are from Advanced Power innovated design andGDsilicon process technology to achieve the
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 7N60AF | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SVF4N60CAF | BLM06N10-P
History: 7N60AF | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SVF4N60CAF | BLM06N10-P



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