AP9467AGM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9467AGM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP9467AGM-HF MOSFET
AP9467AGM-HF Datasheet (PDF)
ap9467agm-hf.pdf

AP9467AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap9467agmt-hf.pdf

AP9467AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 11.5m Low On-resistance ID 38AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast
ap9467agm.pdf

AP9467AGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9467A series are fro
ap9467agh.pdf

AP9467AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43AG Halogen Free & RoHS CompliantSDescriptionAP9467A series are from Advanced Power innovated design andGDsilicon process technology to achieve the
Otros transistores... AP4953GM-HF , AP4955GM , AP4957AGM , AP4957GM , AP4959GM , AP4961GM , AP4963GEM-HF , AP9467AGH-HF , IRF740 , AP9467AGMT-HF , AP9467GH-HF , AP9467GJ-HF , AP9467GS , AP50T10AGI-HF , AP50T10GH-HF , AP50T10GI-HF , AP50T10GJ-HF .
History: 2SK3766 | IRHMS57Z60 | CM18N20 | SUP90P06-09L | G86N06K | AO7801 | CM18N50F
History: 2SK3766 | IRHMS57Z60 | CM18N20 | SUP90P06-09L | G86N06K | AO7801 | CM18N50F



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
mj21194 | oc71 transistor | 2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor | 2sc1845