AP9467AGM-HF Datasheet and Replacement
Type Designator: AP9467AGM-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SO8
AP9467AGM-HF Datasheet (PDF)
ap9467agm-hf.pdf

AP9467AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap9467agmt-hf.pdf

AP9467AGMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 11.5m Low On-resistance ID 38AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast
ap9467agm.pdf

AP9467AGM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP9467A series are fro
ap9467agh.pdf

AP9467AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 11.5m Fast Switching Characteristic ID 43AG Halogen Free & RoHS CompliantSDescriptionAP9467A series are from Advanced Power innovated design andGDsilicon process technology to achieve the
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