AP50T10GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50T10GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.5 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SO8

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AP50T10GM-HF datasheet

 ..1. Size:94K  ape
 ap50t10gm-hf.pdf pdf_icon

AP50T10GM-HF

AP50T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5A G Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.1. Size:58K  ape
 ap50t10gi-hf.pdf pdf_icon

AP50T10GM-HF

AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 6.2. Size:201K  ape
 ap50t10gh.pdf pdf_icon

AP50T10GM-HF

AP50T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology

 6.3. Size:172K  ape
 ap50t10gi.pdf pdf_icon

AP50T10GM-HF

AP50T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8A G RoHS Compliant & Halogen-Free S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

MOSTRAR MÁS

Otros transistores... AP9467AGMT-HF, AP9467GH-HF, AP9467GJ-HF, AP9467GS, AP50T10AGI-HF, AP50T10GH-HF, AP50T10GI-HF, AP50T10GJ-HF, IRF1404, AP50T10GP-HF, AP50T10GS-HF, AP5321GM-HF, AP5322GM-HF, AP5331GM-HF, AP5521GH-HF, AP5521GM-HF, AP55T06GI-HF