AP50T10GM-HF - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP50T10GM-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9.5 ns
Cossⓘ - Выходная емкость: 250 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: SO8
Аналог (замена) для AP50T10GM-HF
AP50T10GM-HF Datasheet (PDF)
ap50t10gm-hf.pdf

AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap50t10gi-hf.pdf

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
ap50t10gh.pdf

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology
ap50t10gi.pdf

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes
Другие MOSFET... AP9467AGMT-HF , AP9467GH-HF , AP9467GJ-HF , AP9467GS , AP50T10AGI-HF , AP50T10GH-HF , AP50T10GI-HF , AP50T10GJ-HF , IRF1404 , AP50T10GP-HF , AP50T10GS-HF , AP5321GM-HF , AP5322GM-HF , AP5331GM-HF , AP5521GH-HF , AP5521GM-HF , AP55T06GI-HF .
History: MTE8D0N08H8 | A9451
History: MTE8D0N08H8 | A9451



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