All MOSFET. AP50T10GM-HF Datasheet

 

AP50T10GM-HF Datasheet and Replacement


   Type Designator: AP50T10GM-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SO8
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AP50T10GM-HF Datasheet (PDF)

 ..1. Size:94K  ape
 ap50t10gm-hf.pdf pdf_icon

AP50T10GM-HF

AP50T10GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 30m Surface Mount Package ID 6.5AG Halogen Free & RoHS Compliant ProductSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 6.1. Size:58K  ape
 ap50t10gi-hf.pdf pdf_icon

AP50T10GM-HF

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 6.2. Size:201K  ape
 ap50t10gh.pdf pdf_icon

AP50T10GM-HF

AP50T10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 37AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andGDSTO-252(H)silicon process technology

 6.3. Size:172K  ape
 ap50t10gi.pdf pdf_icon

AP50T10GM-HF

AP50T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 30m Fast Switching Characteristic ID 21.8AG RoHS Compliant & Halogen-FreeSDescriptionAP50T10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

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History: CEM3317

Keywords - AP50T10GM-HF MOSFET datasheet

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