AP60T10GS Todos los transistores

 

AP60T10GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60T10GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO263
 

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AP60T10GS Datasheet (PDF)

 ..1. Size:95K  ape
 ap60t10gp ap60t10gs.pdf pdf_icon

AP60T10GS

AP60T10GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)ruggedized device design,

 0.1. Size:96K  ape
 ap60t10gp-hf ap60t10gs-hf.pdf pdf_icon

AP60T10GS

AP60T10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resi

 6.1. Size:58K  ape
 ap60t10gi-hf.pdf pdf_icon

AP60T10GS

AP60T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 34AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-res

 8.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

AP60T10GS

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

MOSTRAR MÁS

Otros transistores... AP60T03GI , AP60T03GJ-HF , AP60T03GP , AP60T03GS , AP60T06GJ-HF , AP60T06GP-HF , AP60T10GI-HF , AP60T10GP , 8205A , AP62T03GH , AP62T03GJ , AP6618GM-HF , AP6677GH , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF .

History: SST202 | AM45N06-16D | STD5NK50Z | UT8205AL-S08-R | NCE85H21TC | AO4932

 

 
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