AP60T10GS Specs and Replacement

Type Designator: AP60T10GS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO263

AP60T10GS substitution

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AP60T10GS datasheet

 ..1. Size:95K  ape
 ap60t10gp ap60t10gs.pdf pdf_icon

AP60T10GS

AP60T10GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) ruggedized device design, ... See More ⇒

 0.1. Size:96K  ape
 ap60t10gp-hf ap60t10gs-hf.pdf pdf_icon

AP60T10GS

AP60T10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resi... See More ⇒

 6.1. Size:58K  ape
 ap60t10gi-hf.pdf pdf_icon

AP60T10GS

AP60T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 34A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-res... See More ⇒

 8.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

AP60T10GS

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R ... See More ⇒

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Detailed specifications: AP60T03GI, AP60T03GJ-HF, AP60T03GP, AP60T03GS, AP60T06GJ-HF, AP60T06GP-HF, AP60T10GI-HF, AP60T10GP, IRFP260, AP62T03GH, AP62T03GJ, AP6618GM-HF, AP6677GH, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF

Keywords - AP60T10GS MOSFET specs

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