AP6677GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP6677GH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AP6677GH

AP6677GH Datasheet (PDF)

..1. Size:148K ape
ap6677gh.pdf

AP6677GHRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 12.3m Fast Switching Characteristic ID -60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO-252(H)Sruggedized device des

9.1. Size:60K ape
ap6679gp-a ap6679gs-a.pdf

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-

9.2. Size:198K ape
ap6679gs.pdf

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi

9.3. Size:153K ape
ap6679gi-hf.pdf

AP6679GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-220CFM(I)ruggedized dev

9.4. Size:201K ape
ap6679gp.pdf

9.5. Size:95K ape
ap6679bgm-hf.pdf

AP6679BGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Lower On-resistance D RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination o

9.6. Size:200K ape
ap6679bmt.pdf

AP6679BMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Low On-resistance RDS(ON) 9m Simple Drive Requirement ID -60AG RoHS Compliant & Halogen-FreeSDDescriptionDDAP6679B series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest p

9.7. Size:95K ape
ap6679bgi-hf.pdf

AP6679BGI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

9.8. Size:215K ape
ap6679gh ap6679gj.pdf

AP6679GH/JRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionGDThe TO-252 package is widely preferred for commercial-industrial STO-252(H)surface mount applications and suited for low voltage appl

9.9. Size:125K ape
ap6679gm-hf.pdf

AP6679GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 9mD Fast Switching Characteristic ID -14AG RoHS Compliant SSSO-8SDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ru

9.10. Size:95K ape
ap6679bgp-hf.pdf

AP6679BGP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Grugg

9.11. Size:98K ape
ap6679bgh-hf ap6679bgj-hf.pdf

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

9.12. Size:134K ape
ap6679bgjb.pdf

AP6679BGJB-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

9.13. Size:150K ape
ap6679gi.pdf

AP6679GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DTO-220CFM(I)Sruggedized device design, low on-r

9.14. Size:216K ape
ap6679gh-hf ap6679gj-hf.pdf

AP6679GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for commercial-industrialSTO-252(H)surface mount applications and suit

9.15. Size:97K ape
ap6679gp-hf ap6679gs-hf.pdf

AP6679GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)r

9.16. Size:166K ape
ap6679bgj.pdf

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

9.17. Size:62K ape
ap6679gs p-a-hf.pdf

AP6679GS/P-A-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

9.18. Size:179K ape
ap6679bgm.pdf

AP6679BGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Lower On-resistance RDS(ON) 9mD Fast Switching Characteristic ID -13.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP6679B series are from Advanced Power innovated design andsilicon process tech

9.19. Size:201K ape
ap6679bgh.pdf

AP6679BGH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

9.20. Size:159K ape
ap6679bgp.pdf

AP6679BGP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP6679B series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest

9.21. Size:149K ape
ap6679gr.pdf

AP6679GRRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

9.22. Size:411K cn vbsemi
ap6679gh.pdf

AP6679GHwww.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive2002/95/ECRDS(on) ()VDS (V) ID (A)aAvailable-600.009 at VGS = - 10 VRoHS*- 30COMPLIANT-580.012 at VGS = - 4.5 VSTO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVG

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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